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Dye-sensitized solar cells : ウィキペディア英語版
Dye-sensitized solar cell

A dye-sensitized solar cell (DSSC, DSC or DYSC〔Wan, Haiying ("Dye Sensitized Solar Cells" ), University of Alabama Department of Chemistry, p. 3〕) is a low-cost solar cell belonging to the group of thin film solar cells.〔("Dye-Sensitized vs. Thin Film Solar Cells" ), European Institute for Energy Research, 30 June 2006〕 It is based on a semiconductor formed between a photo-sensitized anode and an electrolyte, a ''photoelectrochemical'' system. The modern version of a dye solar cell, also known as the Grätzel cell, was originally co-invented in 1988 by Brian O'Regan and Michael Grätzel at UC Berkeley〔(EarlyHistory ). Workspace.imperial.ac.uk. Retrieved on 30 May 2013.〕 and this work was later developed by the aforementioned scientists at the École Polytechnique Fédérale de Lausanne until the publication of the first high efficiency DSSC in 1991.〔
〕 Michael Grätzel has been awarded the 2010 Millennium Technology Prize for this invention.〔(Professor Grätzel wins the 2010 millennium technology grand prize for dye-sensitized solar cells ), Technology Academy Finland, 14 June 2010.〕
The DSSC has a number of attractive features; it is simple to make using conventional roll-printing techniques, is semi-flexible and semi-transparent which offers a variety of uses not applicable to glass-based systems, and most of the materials used are low-cost. In practice it has proven difficult to eliminate a number of expensive materials, notably platinum and ruthenium, and the liquid electrolyte presents a serious challenge to making a cell suitable for use in all weather. Although its conversion efficiency is less than the best thin-film cells, in theory its price/performance ratio should be good enough to allow them to compete with fossil fuel electrical generation by achieving grid parity. Commercial applications, which were held up due to chemical stability problems, are forecast in the European Union Photovoltaic Roadmap to significantly contribute to renewable electricity generation by 2020.
==Current technology: semiconductor solar cells==
In a traditional solid-state semiconductor, a solar cell is made from two doped crystals, one doped with n-type impurities (n-type semiconductor), which add additional free conduction band electrons, and the other doped with p-type impurities (p-type semiconductor), which add additional electron holes. When placed in contact, some of the electrons in the n-type portion flow into the p-type to "fill in" the missing electrons, also known as electron holes. Eventually enough electrons will flow across the boundary to equalize the Fermi levels of the two materials. The result is a region at the interface, the p-n junction, where charge carriers are depleted and/or accumulated on each side of the interface. In silicon, this transfer of electrons produces a potential barrier of about 0.6 to 0.7 V.〔(【引用サイトリンク】 publisher = specmat.com )
When placed in the sun, photons of the sunlight can excite electrons on the p-type side of the semiconductor, a process known as photoexcitation. In silicon, sunlight can provide enough energy to push an electron out of the lower-energy valence band into the higher-energy conduction band. As the name implies, electrons in the conduction band are free to move about the silicon. When a load is placed across the cell as a whole, these electrons will flow out of the p-type side into the n-type side, lose energy while moving through the external circuit, and then flow back into the p-type material where they can once again re-combine with the valence-band hole they left behind. In this way, sunlight creates an electric current.〔
In any semiconductor, the band gap means that only photons with that amount of energy, or more, will contribute to producing a current. In the case of silicon, the majority of visible light from red to violet has sufficient energy to make this happen. Unfortunately higher energy photons, those at the blue and violet end of the spectrum, have more than enough energy to cross the band gap; although some of this extra energy is transferred into the electrons, the majority of it is wasted as heat. Another issue is that in order to have a reasonable chance of capturing a photon, the n-type layer has to be fairly thick. This also increases the chance that a freshly ejected electron will meet up with a previously created hole in the material before reaching the p-n junction. These effects produce an upper limit on the efficiency of silicon solar cells, currently around 12 to 15% for common modules and up to 25% for the best laboratory cells (About 30% is the theoretical maximum efficiency for single band gap solar cells, see Shockley–Queisser limit.).
By far the biggest problem with the conventional approach is cost; solar cells require a relatively thick layer of doped silicon in order to have reasonable photon capture rates, and silicon processing is expensive. There have been a number of different approaches to reduce this cost over the last decade, notably the thin-film approaches, but to date they have seen limited application due to a variety of practical problems. Another line of research has been to dramatically improve efficiency through the multi-junction approach, although these cells are very high cost and suitable only for large commercial deployments. In general terms the types of cells suitable for rooftop deployment have not changed significantly in efficiency, although costs have dropped somewhat due to increased supply.

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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